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2N7002VC/VAC
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Symbol
V DSS
V DGR
Value
60
60
Units
V
V
Gate-Source Voltage (Note 5)
Drain Current (Note 5)
Drain Current (Note 5)
Continuous
Pulsed
Continuous
Pulsed
V GSS
I D
I DM
±20
±40
280
1.5
V
mA
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ T C = 25°C
@ T C = 125°C
Gate-Body Leakage
BV DSS
I DSS
I GSS
60
?
?
70
?
?
?
1.0
500
±100
V
μA
nA
V GS = 0V, I D = 10 μ A
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTIC (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
V GS(th)
R DS (ON)
I D(ON)
g FS
1.0
?
?
0.5
80
?
?
?
1.0
?
2.5
7.5
13.5
?
?
V
Ω
A
mS
V DS = V GS , I D = 250 μ A
V GS = 5V, I D = 0.05A,
V GS = 10V, I D = 0.5A, T j = 125°C
V GS = 10V, V DS = 7.5V
V DS = 10V, I D = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
?
50
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
?
?
25
5.0
pF
pF
V DS = 25V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
?
?
20
20
ns
ns
V DD = 30V, I D = 0.2A, R L = 150 Ω ,
V GEN = 10V, R GEN = 25 Ω
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
2N7002VC/VAC
Document number: DS30639 Rev. 6 - 2
2 of 4
www.diodes.com
October 2011
? Diodes Incorporated
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